ST started working on wide bandgap materials (WBG) in 1996 with SiC MOSFETs and SiC diodes and has become one of the main players in the market. Implementing BTP with MOSFETs saw only a slight improvement because reverse recovery losses of the high side synchronous MOSFET of the boost circuit all but erased the gains of removing the bridge rectifier. Posted June 5, 2019 by Jeffrey Jenkins & filed under Features, Tech Features.. Just as engineers are starting to get used to the advantages (and quirks) of silicon carbide (SiC ) devices, another semiconductor material joins the fray: gallium nitride, or GaN. While these … Privacy Center | Bill Schweber is a contributing writer for Mouser Electronics and an electronics engineer who has written three textbooks on electronic communications systems, as well as hundreds of technical articles, opinion columns, and product features. | Gate-driver ICs, available from many vendors, are valuable to handle many of the subtleties while still allowing the user to tailor the design specifics to the selected GaN device, the design switching speed and other factors. The slew rate and shape of this charge/discharge drive waveform is an important factor in performance. While there are differences between MOSFETs and GaN devices, let’s look at areas of commonality first. In addition, using discrete GaN transistors provide customers a wide range of products and multiple sources of GaN devices. . turning on and off of the GaN HEMT. View Mobile From the FOM1, FOM2, and FOM3, it is not difficult to conclude that the GaN HEMT with part number EPC2021 is better than other GaN HEMTs and Si MOSFETs. Underlying design advantages for GaN MOSFETs compared with GaN HFETs for power applications Underlying design advantages for GaN MOSFETs compared with GaN HFETs for power applications Bothe, Kyle; Barlage, Douglas 2013-09-10 00:00:00 J Comput Electron (2014) 13:217–223 DOI 10.1007/s10825-013-0502-7 Underlying design advantages for GaN MOSFETs compared with GaN … GaN devices are not only smaller than Si power MOSFETs (the dominant type of silicon transistor at voltages below 600 V), but also much faster. Mouser® and Mouser Electronics® are trademarks of Mouser Electronics, Inc. The rated voltage, typically 650 V or 100 V, is the minimum voltage transistors will block or hold off. With no parasitic body diodes and the reverse conduction capabilities of GaN E-HEMTS, the reverse recovery losses in BTP PFC are eliminated and the true value of topology is realized. Figure 4: A detailed model of the GaN device turn-on scenario is needed to analyze the turn-on issues and solutions. It would therefore be an advantage to adjust the gate-drive pull-up resistance to minimize transition time without inducing other unwanted loss mechanisms. Benefits or advantages of HEMT. The consequences are false turn-on/off, system malfunction or even device failure. This resistor ratio is generally in range of between five and 10Ω for controlling the Miller effect. Device Architecture. SiC MOSFETs have a much more stable R. DS(on) over temperature than Si MOSFETs. All of the proven advantages of GaN technology over Si MOSFETs can be realized with the right controller design. In contrast, enhancement-mode devices are off and do not conduct current when there is zero bias on the gate, which is the desired start-up state. In simplest terms, the role of the driver is to be the electrical interface between the lower-voltage digital output of the microprocessor-based controller or similar circuitry and the higher-voltage, high-current, slew-rate demands of the power-switching device. The high dV/dt and di/dt transitions, combined with low input capacitances and gate thresholds, mean that noise-induced spikes on the gate, as well as the Miller effect, may result in gate ringing or sustained oscillation. Cree is offering a SiC mosfet at 650V, and it looks like GaN will vie directly with SiC somewhere between 650V and 1,200V. Figure 2 Power electronics market segmentation by breakdown voltage and frequency. (Source: Texas Instruments). Before those roles, Bill was at Instron Corp., doing hands-on analog- and power-circuit design and systems integration for materials-testing machine controls. The hybrid becomes normally OFF, the gate-drive voltages are now non-critical and the body diode of the MOSFET is fast with very low reverse recovery charge and has low voltage drop. The introduction of solid state transistors in switching applications enabled the switching power converter and created a step function improvement in power conversion efficiency. (Note that GaN-based RF power amplifiers, or PAs, also have achieved major design-in success, but that is a very different application and beyond the scope of this article.) Figure 7: The Texas Instruments LMG1205 gate driver embodies many features and specifications that make it well-suited for GaN-device management. Advantages of GaN Gallium Nitride is a wide bandgap (3.4 eV) compound made up of Gallium and Nitrogen. Improved System Performance with New and Enhanced Topologies. In addition, there are existing, already widely-used MOSFET drivers that have the flexibility, specifications, and features to also handle GaN devices as long as the GaN device is used at lower frequencies. Fig. Figure 2: The GaN Systems GS66516B 650V enhancement-mode GaN-on-silicon power transistor has six contacts, doubled up to increase current capacity and reduce stray inductance. Wide Band Gap semiconductors, specifically GaN (gallium nitride) power transistors, are currently leading the drive to higher efficiency. Driving GaN transis-tors directly with existing high-volume MOSFET controllers simplifies GaN designs and reduces the cost of implementing the drive circuit. The benefits in switching power applications is that there is no reverse recovery body diode loss and high and has voltage slew rate ruggedness, which are traditional weaknesses in Si MOSFETs. Like a MOSFET, a GaN transistor has a source, drain and gate, and the key figures of merit are on-resistance and breakdown voltage. The significantly smaller COSS of the GaN E-HEMTs compared to silicon transistors allows for larger magnetizing inductance which equates to lower transformer losses. This produces the normally off e-mode transistor, controlled with a positive gate bias turn on the 2DEG. Effectively GaN E-HEMTs are similar to MOSFETs with much faster, more efficient switching, and reduced conduction losses. Not only because of the resulting power savings and total … Figure 1: A GaN switch is built on a silicon substrate, with a lateral two-dimensional electron gas (2DEG) channel formed on a AlGaN/GaN hetero-epitaxy structure that provides very high charge density and mobility; the enhancement-mode GaN device does not conduct when the gate drive is at zero (left image) but does conduct when the gate drive exceeds the threshold (center and right images). This high electron mobility means that GaN has a higher electric-field strength than silicon does, and also means that a GaN device will have a smaller size for a given on-resistance and breakdown voltage than a silicon semiconductor. Other steps include adjusting the value of the gate-drive resistor to fine tune the turn-on slew rate; using a negative bias (-3V) for the turn off; adding ferrite beads in series with the gate to reduce high-frequency LC-ringing and overshoot; and possibly adding an RC “snubber” across the gate-source path. As an example, a 50W, 6.78 MHz Class E wireless power transmitter with 90% target transmit efficiency would use 56% of its power loss budget to drive MOSFETs compared to only 4% when using GaN E-HEMTs  (figure 4). “If you could have an ideal GaN switch, it would be better than SiC, but GaN epi is 10 6 more defective than SiC,” said Paul Kierstead, director of marketing at SiC mosfet and RF GaN hemt maker Cree. At Analog Devices, Inc. (a leading vendor of analog and mixed-signal ICs), Bill was in marketing communications (public relations); as a result, he has been on both sides of the technical PR function, presenting company products, stories, and messages to the media and also as the recipient of these. Sitemap. On-resistance is 25m?, and maximum drain-source current is 10A, while switching frequency can be as high as 10MHz and even higher. Three factors define the top-tier concerns of driving GaN devices: The maximum allowable gate voltage, the gate threshold voltage, and the body diode voltage drop. The gate voltage is also lower than it is for most power MOSFETs and also has a lower negative temperature coefficient, which also simplifies driver-compensation issues. It must also do so consistently, with proper skew-time control to avoid “shoot-through” short-circuits in bridge configurations. GaN is formed by forming gallium and nitrogen … reverse recovery charge (Q. rr) and reverse recovery time (T. rr) than Si MOSFETs. The higher energy gives GaN power transistors a number of advantages, including: • Lower gate capacitance and output capacitance for higher switching frequency with lower switching losses. Silicon carbide (SiC) and gallium nitride (GaN) semiconductors have advantages over silicon semiconductors for power applications, especially in the power supply market. This also lowers the rms current through the half-bridge power switches and thus reduces conduction losses. Advances in switching power transistors has helped improve efficiency and reliability and reduce size and cost in power electronics applications. Silicon MOSFETs are vertical devices meaning the drain to source current flows from the top (source) of the silicon die through the MOSFET channel to the drain substrate on the bottom. Before GaN power transistors were available, silicon MOSFETs were the only choice for BTP configurations. By re-designing IGBT and MOSFET solutions with GaN-based FETs, DRS optimized vehicle inverter performance increased switching frequency by a factor of four, reduced size and weight, while achieving 98.5% efficiency. True GaN™ has a unique advantage in high performance (high voltage and high frequency) and with minimal effort, it is capable of competing in other markets with ease. What is the primary advantage of GaN over silicon power transistors? Bandgap is a region formed at the junction of materials where no electron exists. Following are the benefits or advantages of HEMT with GaAs-AlGaAs heterojunction: Offers high Gain Offers high Switching Speed Offers low Noise operations Useful over 5 to 100 GHz range Offers higher efficiency Offers high P max High electron mobility as mentioned. Smaller transistor packages, like TO-263 or DFN packages have helped to reduce extrinsic transistor impedances but are effectively restricted to lower power application due to size and lead frame requirements. Similar to MOSFETs, a positive voltage between gate and source on the E-HEMTs enables high electron mobility path between the drain and source terminals (see figure 1). Copyright © 2021 Power Systems Design, All rights reserved. All of the proven advantages of GaN technology over Si MOSFETs can be realized with the right controller design. This is true only for enhancement mode devices. Peter Di Maso, Director, Product Line Management at GaN Systems. However, the rate of improvements in these MOSFETs has leveled off, as their performance is now close to the theoretical limit as determined by the underlying fundamental physics of these materials and processes. It takes a properly matched and configured driver to ensure that the switching device—either GaN or MOSFET—operates to its full specifications and does not have unintended issues. The hetero-interface between GaN and AlGaN forms a two-dimensional electron gas (2DEG) and is the basis for a high mobility channel. Is GaN similar to SiC? However, the speed and capabilities of these GaN devices means that even more attention and sophistication is needed to properly manage their turn-on/off characteristics with respect to gate drive, voltage and current slew rate, current levels, noise sources and coupling, layout considerations and many other factors. (Source: GaN Systems). SiC vs GaN semiconductors for EV power converters: Tech Opinion. Both MOSFETs and enhancement-mode GaN devices are normally off and are voltage-driven devices (not current-driven) with an input capacitance that must be properly charged/discharged by their driver. GaN power transistors are manufactured by growing layers of GaN and AlGaN (aluminum GaN) on silicon substrates – the same as standard Si MOSFETs used in high volume. The switching loss analysis of GaN E-EHEMTs is again similar to the analysis for MOSFETs. The benefits of GaN collectively lower system, shipping, installation, maintenance, and operating costs. For air conditioners, efficiency is critical, GaN helps meet the green energy requirements. Silicon-based MOSFET devices have been extremely successful and represent the present standard for Corporate headquarters and logistics center in Mansfield, Texas USA. (Source: GaN Systems), Figure 5: A complementary model of the GaN device turn-off situation is also needed.
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